The standards organization JEDEC has released version 3.0 of the Universal Flash Storage (UFS) specification. The new specification more than doubles the bandwidth from the previous version, providing up to two lanes at 1450 MB/s, for a maximum of 2.9 GB/s, compared to a maximum of 1.2 GB/s. The standard also includes temperature reporting mechanisms on the storage controller intended specifically for the automotive market, where electronics are subject to more adverse conditions. Read More
Before every MWC event, Samsung gradually unveils bits and pieces of its semiconductor innovations that not-so-suprisingly end up inside its line of imminent Galaxy S devices. So far this year, the company has announced its 8Gb LPDDR4 RAM chip (with 4GB of RAM) and 14nm FinFET processor (to be introduced in the company's Exynos 7 Octa), both of which promise faster speeds and more power efficiency.
Today we get another glimpse inside the Galaxy S6, well...presumably. (The timing is just perfect, isn't it?) Samsung is taking the cover off a significant advancement in the semiconductor space for smarphones: a 128GB NAND memory based on the much anticipated UFS 2.0 standard. Read More